Development of silicon carbide (SiC) micro vertical transverse field effect transistors
Abstract
Simulation with a finite element method has become a major and important tool that can explain the physical behavior of electronic devices. Data from constructed devices are taken as input and with a feedback process between the results and the measurements; one can explain the operation of the device. This has been achieved to an excellent degree in silicon electronics, since silicon is the most well known semiconductor material, but not in Silicon carbide. Silicon carbide (SiC) has been extensively used only recently and both the physical models and their parameters are susceptible to many improvements, since there are several ambiguities – uncertainties which are observed during simulation. Many publications contain simulation results, but only a few describe accurately the simulation models and their parameters. The aim of this work is to establish an explicit procedure for achieving reliable TCAD simulation results. For this purpose the physical parameters and properties of 4H-SiC ...
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